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Mr. Dubey • 51.17K Points
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Q.) The high density FLASH memory cell is implemented using                          

(A) 1 floating-gate mos transistor
(B) 2 floating- gate mos transistors
(C) 4 floating- gate mos transistors
(D) 6 floating- gate mos transistors
Correct answer : Option (A) - 1 floating-gate mos transistor

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