M

Mr. Dubey • 52.30K Points
Coach

Q. 3 IMPATT DIODES, SCHOTTKY BARRIER DIODES, PIN DIODES

(A) avalanche multiplication
(B) break down of depletion region
(C) high reverse saturation current
(D) none of the mentioned
Correct : Option (A)

Explanation:
 a reverse bias voltage exceeding the breakdown voltage is applied to an impatt diode, a high electric field appears across the n+ p junction. this high field imparts sufficient energy to the holes and also to valence electrons to raise themselves to the conduction band. this results in avalanche multiplication of electron hole pair.

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